unisonic technologies co., ltd 4N30Z power m o sfet www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r502-849.a 4a, 300v n-channel power mosfet ? descripti on t he u t c 4N30Z is an n-ch ann el mod e p o w e r mosf et using ut c?s advanc ed techn o lo g y to provid e customers w i th a minimu m on-state res i s t ance, lo w g a te char ge a nd su peri o r s w itc h in g performa nce. ? features * r ds (on) <2 ? @ v gs = 10v, i d =4 a * high s w itc h in g spee d * t y pic all y 3. 2n c lo w gat e cha r ge * 100 % aval an che tested * enha nced es d capa bilit y ? sy mbol ? or de r i ng i n form at i o n ordering n u m ber package pi n assi gn me nt packing lead free halogen free 1 2 3 4N30Zl-tn3-r 4N30Zg-tn3-r to-252 g d s tape reel 4N30Zl-tn3-t 4N30Zg-tn3-t to-252 g d s tube note: pin assignment: g: ga te d: drain s: source http://
4N30Z power m o sfet unisonic technologi es co., ltd 2 of 3 w w w . uniso nic.co m.t w ver .a ? absolute maxi mu m ra ting s paramet er symbol rat i ngs unit drain-s ource voltag e v ds s 300 v gate-source v o ltag e v gss 20 v continuous drain current i d 4 a avalanche current i ar 4 a avalanche energy singl e puls ed e as 52 mj repetitive e ar 52 mj po w e r diss i pat ion p d 1.14 w junction temperature t j +150 c storage t e mperature t st g -55~ + 150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electric al ch ara cteri s tic s paramet er symbol t es t conditions min t yp max unit off characteristics drain-s ource breakd o w n vo l t age bv ds s i d = 250a, v ds = 0 v 300 v drain-s ource l eaka ge curr en t i ds s v ds = 300v 1 a gate-source l eaka ge curr en t fo rw ard i gss v gs = + 20v, v ds =0 v 1 0 a reverse v gs = - 20v, v ds =0 v 1 0 a on characteristics gate t h reshold voltag e v gs ( th ) i d = 250a 2 4 v static drain-s o urce on-state resistanc e r ds ( on ) v gs = 10v, i d =4 a 2 ? dynamic parameters input cap a cita nce c iss v gs =0 v, v ds = 25v, f= 1mhz 850 pf output capac itance c oss 250 pf reverse t r ansfer capac itanc e c rs s 200 pf switching parameters t o tal gate charge q g v dd = 50v, i d =4 a, i g = 100a, v gs = 10v 3.2 nc gate to source charge q gs 0.64 nc gate to drain charge q gd 1.6 nc t u rn-on dela y t i me t d ( on ) v dd = 30v, i d =4 a, r g =2 5 ? , v gs =0~10v 6 ns rise t i me t r 38 ns turn-off delay time t d ( off ) 11 ns fall-t i me t f 13 ns source- drain diode ratings and characteristics maximum bod y -d iod e conti n uous c u rrent i s 4 a maximum body -diode puls ed current i sm 16 a drain-s ource diod e f o r w ard voltage v sd i s = 4 a 0.1 1.48 v
4N30Z power m o sfet unisonic technologi es co., ltd 3 of 3 w w w . uniso nic.co m.t w q w - r 5 0 2 - 8 4 9 . a ? ty pic al c h ara ct e ris tic s drain current, i d (a) drain current, i d (a) drain current, i d (a) drain current, i d (a) ut c as s u m e s no r e s pon s i bility f o r equipm e n t f a il u r es th at r e s u lt f r om us ing pr oducts a t v a lue s that ex ceed, ev e n m o m entar ily , r a ted v a lues ( s uch a s m a x i m u m r a tings , oper ating condition r anges , or othe r par am eter s ) lis t ed in pr oducts s pecif ications of any and all u t c pr odu c t s des cr ibed or contained her ein. u t c pr oducts ar e not des igned f o r us e in lif e s upp or t appliances , dev i c es or s y s t e m s w her e m a l f unction of thes e pr o ducts can be r eas onably ex p ected to r es ult in per s onal injur y . r epr oduction in w hole or in p ar t is p r ohibited w i thout the pr ior w r itt en cons ent of the copyr i ght ow n er . t he inf o r m ation pr es e n ted in this docum ent does not f o r m par t of any quotation or contr a ct, is believ e d to be accur a te and r e liable and m a y be changed w i thout notice.
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